Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer
- 15 May 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (10) , 7322-7324
- https://doi.org/10.1063/1.347583
Abstract
A significant reduction in the density of end‐of‐range (EOR) defects was achieved in BF+2 implanted (111)Si by the formation and growth of a polycrystalline NiSi2 overlayer in samples annealed at 850–900 °C. In contrast, no apparent reduction in the density of EOR defects was found in BF+2 implanted silicon with no NiSi2 layer or with an epitaxial NiSi2 overlayer, subjected to the same heat treatment. The significant reduction in density of the EOR defects was correlated to the grain growth of thin polycrystalline NiSi2 overlayer. The availability of both polycrystalline and epitaxial NiSi2 on BF+2 implanted (111)Si made a direct comparison of the effects of different structures of the same silicide on the removal of the EOR defects possible.This publication has 11 references indexed in Scilit:
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