Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate
- 1 July 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (7) , 1375-1384
- https://doi.org/10.1109/16.848280
Abstract
In this paper, we report the performance of a new photodetector fabricated on SOI substrate using a standard CMOS process. The photodetector is formed by connecting the gate and the body of a NMOSFET. The gate-body terminal is left floating so that the potential can be modulated by illumination. The depletion region induced by the floating gate separates the optically generated electron-hole pairs in the direction perpendicular to the current. This increases the body potential and induces positive charges to the gate due to the tied gate and body. It results in a further turn on of the NMOSFET and extra optical current. The gain behavior under different illumination is characterized and explained by transistor theory. A wide signal range of more than six orders of magnitude and a high responsivity of about 1000 A/W have been obtained with an operating voltage as low as 0.2 V. The device scaling properties, noise behavior and transient response are also studied.Keywords
This publication has 15 references indexed in Scilit:
- A physically-based low-frequency noise model for NFD SOI MOSFET'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Efficacy of Ar in reducing the kink effect on floating-body NFD/SOI CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Performance of a CMOS compatible lateral bipolar photodetector on SOI substrateIEEE Electron Device Letters, 1998
- CMOS image sensors: electronic camera-on-a-chipIEEE Transactions on Electron Devices, 1997
- Analytical modeling for the collector current in SOI gate-controlled hybrid transistorSolid-State Electronics, 1996
- Light dependence of partially depleted SOI-MOSFET's using SIMOX substratesIEEE Transactions on Electron Devices, 1995
- Carrier recombination influence on the SOIMOSFET floating body effectIEEE Electron Device Letters, 1994
- The kink-related excess low-frequency noise in silicon-on-insulator MOST'sIEEE Transactions on Electron Devices, 1994
- The influence of light on the properties of NMOS Transistors in laser µ-zoned crystallized silicon layersIEEE Electron Device Letters, 1984