Analytical modeling for the collector current in SOI gate-controlled hybrid transistor
- 31 December 1996
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (12) , 1816-1818
- https://doi.org/10.1016/s0038-1101(96)00118-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Empirical modeling for gate-controlled collector current of lateral bipolar transistors in an n-MOSFET structureSolid-State Electronics, 1995
- High-gain lateral bipolar action in a MOSFET structureIEEE Transactions on Electron Devices, 1991
- An SOI voltage-controlled bipolar-MOS deviceIEEE Transactions on Electron Devices, 1987
- A two-dimensional model for the lateral p—n—p transistorIEEE Transactions on Electron Devices, 1974