Memory effects in the structure silicon single crystal-ferroelecltric film
- 1 October 1983
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics Letters Section
- Vol. 1 (2) , 51-56
- https://doi.org/10.1080/07315178308200553
Abstract
The memory effects in the structure: (Ba Sr) TiO3 film-silicon single crystal have been studied, It is shown that for explaining them it is necessary to take into account both the natural unipolarity of (Ba, Sr) TiO3 film and the injection of carriers from Si. In terms of the results obtained a conclusion has been made on the possibility of using such structures as currentless cells memory for long-term storage of information.Keywords
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