Oxygen-implanted double-heterojunction GaAs/GaAlAs injection lasers
- 1 July 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 11 (7) , 413-418
- https://doi.org/10.1109/jqe.1975.1068675
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Carrier and gain spatial profiles in GaAs stripe geometry lasersJournal of Applied Physics, 1973
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973
- Optical and electrical properties of proton-bombarded p-type GaAsJournal of Applied Physics, 1973
- Compensation of GaAs by Oxygen ImplantationPublished by Springer Nature ,1973
- Contact resistances of AuGeNi, AuZn and Al to III–V compoundsSolid-State Electronics, 1972
- Determination of Lattice Disorder Profiles in Crystals by Nuclear BackscatteringJournal of Applied Physics, 1972
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972
- Very-Low-Current Operation of Mesa-Stripe-Geometry Double-Heterostructure Injection LasersApplied Physics Letters, 1972
- The liquid phase epitaxy of AlxGa1-xAs for monolithic planar structuresProceedings of the IEEE, 1971
- Ranges of nitrogen ions in Al, Ni, Ag, and AuCanadian Journal of Physics, 1968