Principles of plasma-activated chemical vapour deposition
- 31 December 1987
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 33, 31-48
- https://doi.org/10.1016/0257-8972(87)90174-5
Abstract
No abstract availableThis publication has 72 references indexed in Scilit:
- Plasma-Enhanced Chemical Vapor Deposition of Thin FilmsPublished by Elsevier ,1982
- The plasma-assisted chemical vapour deposition of TiC, TiN and TiCxN1−xThin Solid Films, 1981
- Deposition of silicon carbide coatings on titanium alloy with a low pressure R.F. plasmaThin Solid Films, 1980
- Infrared absorption of hydrogenated amorphous SiC and GeC filmsThin Solid Films, 1980
- Plasma Deposition of Inorganic Thin FilmsAnnual Review of Materials Science, 1979
- The determination of interface layers by spectroscopic ellipsometryThin Solid Films, 1979
- Effects of the silicon-to-carbon ratio and the hydrogen content in amorphous SiC thin films prepared by reactive sputteringThin Solid Films, 1979
- In situ preparation of protective coatings for controlled nuclear fusion devicesJournal of Nuclear Materials, 1978
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977
- Chemical vapour deposition promoted by r.f. dischargeSolid-State Electronics, 1965