Nondestructive TAV Spectroscopy to Detect Impurity Levels in Semiconductor by Scanning the Energy Gap with Biasing Electric Field
- 1 January 1985
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1016-1021
- https://doi.org/10.1109/ultsym.1985.198668
Abstract
No abstract availableKeywords
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