Nondestructive evaluation of the semiconductor interface states' density using the transverse acoustoelectric voltage
- 31 January 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (1) , 75-81
- https://doi.org/10.1016/0038-1101(86)90200-5
Abstract
No abstract availableKeywords
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