Chemical Treatment Effects on Si Surfaces in SC2 Solutions Studied by Spectroscopic Ellipsometry
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1A) , L15
- https://doi.org/10.1143/jjap.33.l15
Abstract
Si surfaces chemically treated in HCl:H2O2:H2O=X:1:6 [X=1 (SC2) and 0] at 80°C have been studied using spectroscopic ellipsometry (SE). The SE data clearly indicate that both theX=1 and 0 solutions result in surface chemical oxidation. The chemical oxidation occurs immediately upon immersion of the samples in the solutions. The thickness of chemical oxide shows a saturated value of ∼9.5±1 (X=1) and ∼11.5±1 Å (X=0) against immersion timet.Keywords
This publication has 15 references indexed in Scilit:
- Chemical Treatment Effects of Si Surfaces in NH4OH:H2O2:H2O Solutions Studied by Spectroscopic EllipsometryJapanese Journal of Applied Physics, 1993
- HF-Treated (111), (110) and (100)Si Surfaces Studied by Spectroscopic EllipsometryJapanese Journal of Applied Physics, 1993
- HF- and NH4OH-treated (111)Si surfaces studied by spectroscopic ellipsometryJournal of Applied Physics, 1993
- Study of Si Etch Rate in Various Composition of SC1 SolutionJapanese Journal of Applied Physics, 1993
- Spectroscopic-Ellipsometry Analysis of Si Films Prepared by RF SputteringJapanese Journal of Applied Physics, 1992
- The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH4OH/H2O2 MixturesJapanese Journal of Applied Physics, 1992
- A Mechanistic Study of Silicon Etching in NH 3 / H 2 O 2 Cleaning SolutionsJournal of the Electrochemical Society, 1990
- Optical dispersion relations for Si and GeJournal of Applied Physics, 1989
- An In Situ Ellipsometric Study of Aqueous NH 4 OH Treatment of SiliconJournal of the Electrochemical Society, 1989
- Model dielectric constants of Si and GePhysical Review B, 1988