Improved control of momentary rapid thermal annnealing for silicidation
- 1 June 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (6) , 661-665
- https://doi.org/10.1007/bf02666414
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A high-performance 0.25- mu m CMOS technology. II. TechnologyIEEE Transactions on Electron Devices, 1992
- A high-performance 0.25- mu m CMOS technology. I. Design and characterizationIEEE Transactions on Electron Devices, 1992
- Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/IEEE Transactions on Electron Devices, 1991
- Disintegration of TiSi2 on narrow poly-Si lines at high temperaturesJournal of Vacuum Science & Technology B, 1990
- Suppression of lateral silicide formation in submicron TiSi2 ohmic contacts to heavily doped p-type siliconApplied Physics Letters, 1990
- Effect Of Silicon Emissivity On Temperature Measurement And Control In Rapid Thermal ProcessingPublished by SPIE-Intl Soc Optical Eng ,1990
- High Temperature Process Limitation on TiSi2Journal of the Electrochemical Society, 1986
- Metastable phase formation in titanium-silicon thin filmsJournal of Applied Physics, 1985
- Growth of titanium silicide on ion-implanted siliconJournal of Applied Physics, 1983
- Spectral Emissivity of SiliconJapanese Journal of Applied Physics, 1967