New reactor design for growth of InP and related alloys
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 242-247
- https://doi.org/10.1016/0022-0248(88)90534-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Growth characteristics of a vertical rotating-disk OMVPE reactorJournal of Crystal Growth, 1988
- Use of flow visualization and tracer gas studies for designing an InP/InGaAsP OMVPE reactorJournal of Crystal Growth, 1987
- Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructuresJournal of Crystal Growth, 1986
- Vertical versus horizontal reactor: An optical study of the gas phase in a MOCVD reactorJournal of Crystal Growth, 1986
- Flow visualization studies for optimization of OMVPE reactor designJournal of Crystal Growth, 1986
- Uniform Epitaxial Growth of Modulation-Doped GaAs/Ga0.7Al0.3As on Three-Inch Substrate by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1986
- The effect of gas temperature on the growth of InP by atomspheric pressure metal-organic chemical vapor deposition using trimethyl indium and PH3 sourcesJournal of Electronic Materials, 1985
- A re-examination of boundary layer theory for a horizontal CVD reactorJournal of Crystal Growth, 1984
- Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium sourceJournal of Crystal Growth, 1984
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984