Quantitative determination of the topography of microelectronic devices by SEM micrographs

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Abstract
The scanning electron microscope (SEM) is commonly used for analysis and process control of microelectronic devices, but the majority of SEM micrographs do not readily yield quantitative topographic information. It is shown how SEM micrographs have to be made and analysed in order to determine profile thicknesses as well as slope angles and/or contours. Another method is given for quick calculations of profile thickness and slope angles using a test pattern, thus obviating the need to include the magnification and the viewing angle. Whole semiconductor wafers with diameters of up to 3 in can be used without first having to be prepared. The positioning of the sample on the specimen holder while operating the SEM is explained. The method is demonstrated using micrographs of photoresist patterns and etched profiles.