Low-temperature film growth of Si by reactive ion beam deposition
- 16 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (7) , 386-388
- https://doi.org/10.1063/1.98207
Abstract
A new low-temperature film formation technique is proposed. It uses ionized species produced by an electron cyclotron resonance-type microwave ion source with reactive gases and controlled in the low ion energy region, less than about 500 eV. Good quality homoepitaxial films on Si(111) are obtained at 600 °C and 100–500 eV ion energy by using SiH4 as a material gas. By increasing the ion energy to 250-300 eV, homoepitaxial growth at 400 °C can be achieved. Polycrystalline Si films on the same type of substrates can also be obtained at 200 °C.Keywords
This publication has 11 references indexed in Scilit:
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983
- Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 KApplied Physics Letters, 1982
- Role of ions in ion-based film formationThin Solid Films, 1982
- Growth of thin silicon films on sapphire and spinel by molecular beam epitaxyApplied Physics Letters, 1980
- Mass spectrometry of a silane glow discharge during plasma deposition of a-Si: H filmsThin Solid Films, 1980
- Structure and Properties of LPCVD Silicon FilmsJournal of the Electrochemical Society, 1980
- Silicon molecular beam epitaxy with simultaneous ion implant dopingJournal of Applied Physics, 1980
- Some trends in preparing film structures by ion beam methodsThin Solid Films, 1978
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972