Electronic structure of the/Si(111) interface
- 15 October 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (16) , 8880-8885
- https://doi.org/10.1103/physrevb.44.8880
Abstract
The electronic structure of the /Si(111) interface calculated within the local-density-functional theory with the linear muffin-tin orbitals method is presented. We examine the interface states for three different structural models of the Ca-terminated interface. For each model a pair of two-dimensional interface bands is found. The unoccupied interface band around the zone center is a truly localized band while the occupied interface band is buried below the valence-band maximum in agreement with recent experimental results. The nature of the two-dimensional interface states and the extent of localization of the wave functions at the interface are also discussed.
Keywords
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