Annealing of electron irradiated GaP studied by positron lifetime technique
- 1 February 1988
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 23 (2) , 243-246
- https://doi.org/10.1002/crat.2170230223
Abstract
GaP single crystals were irradiated by 3 MeV electrons at 20 K to a dose of 4 × 1018 e/cm2. An isochronal annealing in temperature region 77 ÷ 650 K followed the irradiation. Positron lifetime measurement indicated the presence of irradiation‐induced vacancies in Ga sublattice. The vacancies disappeared at two stages observed at temperatures 200 ÷ 300 K and 450 ÷ 550 K.Keywords
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