Effect of X-ray radiation on MOSFET's (SIMOX) LF excess noise
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (3) , 367-371
- https://doi.org/10.1109/23.277519
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- 1/f noise in n- and p-channel MOS devices through irradiation and annealingIEEE Transactions on Nuclear Science, 1991
- Physical basis for nondestructive tests of MOS radiation hardnessIEEE Transactions on Nuclear Science, 1991
- Low-frequency noise in depletion-mode SIMOX MOS transistorsIEEE Transactions on Electron Devices, 1991
- Evidence that similar point defects cause 1/fnoise and radiation-induced-hole trapping in metal-oxide-semiconductor transistorsPhysical Review Letters, 1990
- Subthreshold slope in thin-film SOI MOSFETsIEEE Transactions on Electron Devices, 1990
- Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistorsIEEE Transactions on Nuclear Science, 1989
- Analysis of gamma-radiation induced instability mechanisms in CMOS transistorsSolid-State Electronics, 1989
- From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomenaIEEE Transactions on Nuclear Science, 1988
- Theory and experiment on the 1/noise inp-channel metal-oxide-semiconductor field-effect transistors at low drain biasPhysical Review B, 1986
- Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance TestingIEEE Transactions on Nuclear Science, 1986