1/f noise in n- and p-channel MOS devices through irradiation and annealing
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1297-1303
- https://doi.org/10.1109/23.124108
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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