Entropy measurements on slow Si/SiO2 interface states

26 March 1990

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 56 (13) , 1245-1247
https://doi.org/10.1063/1.102527

Abstract

Using telegraph noise measurements on small n- and p-channel metal-oxide-silicon field-effect transistors, we have measured the entropy change associated with the change of the charge state of individual slow Si/SiO2 surface states. In n-channel devices we find that the entropy change is positive on electron emission to the silicon conduction band, while in p-channel devices it is positive on hole emission to the valence band. The results suggest that the slow states in the upper and lower regions of the silicon band gap are of a different type.

Keywords

This publication has 13 references indexed in Scilit:

Observation of ‘‘slow’’ states in conductance measurements on silicon metal-oxide-semiconductor capacitors
Applied Physics Letters, 1989
Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
Advances in Physics, 1989
Spatial and energetic distribution of Si- ${SiO}_{2}$ near-interface states
Physical Review B, 1988
Individual oxide traps as probes into submicron devices
Applied Physics Letters, 1988
Localized-State Interactions in Metal-Oxide-Semiconductor Tunnel Diodes
Physical Review Letters, 1987
Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors
Physical Review B, 1987
Capture and emission kinetics of individual Si:SiO2 interface states
Applied Physics Letters, 1986
1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors
Applied Physics Letters, 1985
Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
IEEE Transactions on Electron Devices, 1984
Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( $\frac{1}{f}$ ?) Noise
Physical Review Letters, 1984