Deep center inAl0.3Ga0.7As
- 15 May 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (14) , 12126-12129
- https://doi.org/10.1103/physrevb.43.12126
Abstract
We report the observation of a new trapping center in As. The center becomes active under a hydrostatic pressure of ∼45 kbar, and has an unusually deep emission barrier. It quenches all radiative transitions and causes a hysteresis in the photoluminescence intensity, which we interpret via a lattice-relaxation model. It is neither the DX nor the SD center, and probably related to a donor.
Keywords
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