Nickel-related deep levels in silicon studied by combined hall effect and DLTS measurement
- 16 January 1987
- journal article
- localized electronic-states
- Published by Wiley in Physica Status Solidi (a)
- Vol. 99 (1) , K49-K52
- https://doi.org/10.1002/pssa.2210990150
Abstract
No abstract availableKeywords
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- Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of SiliconJapanese Journal of Applied Physics, 1967
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