Characterisation of properties of nickel in silicon using thermally stimulated capacitance method
- 30 November 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (11) , 907-909
- https://doi.org/10.1016/0038-1101(77)90012-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Thermal capture of electrons and holes at zinc centers in siliconSolid-State Electronics, 1973
- Determination of the spatial distribution of deep centers from capacitance measurements of pn junctionsApplied Physics Letters, 1972
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Electrical Properties of High-Resistivity Nickel-Doped SiliconJournal of Applied Physics, 1970
- The properties of nickel in siliconProceedings of the IEEE, 1969
- Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of SiliconJapanese Journal of Applied Physics, 1967
- Behavior of Nickel as an Impurity in SiliconJapanese Journal of Applied Physics, 1964
- Properties of Silicon Doped with NickelJapanese Journal of Applied Physics, 1963
- THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSISApplied Physics Letters, 1962