Photoelectric emission and conductance studies on fully fabricated PHEMTs
- 30 September 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (9) , 1615-1618
- https://doi.org/10.1016/0038-1101(95)00060-7
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescenceJournal of Applied Physics, 1994
- Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigationsSolid-State Electronics, 1994
- Characterization and improvement of the layer uniformity for large-area quantum well device arrays grown in an Intevac/Varian Gen II molecular beam epitaxy systemJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Room temperature photoluminescence from modulation doped AlGaAs/InGaAs/GaAs quantum wellsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Quantitative characterization of modulation-doped strained quantum wells through line-shape analysis of room-temperature photoluminescence spectraJournal of Applied Physics, 1993
- Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistorsApplied Physics Letters, 1992
- Photoluminescence studies of pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wellsApplied Physics Letters, 1989
- Analysis of parallel Schottky contacts by differential internal photoemission spectroscopyJournal of Applied Physics, 1983
- InGaAsP p-i-n photodiodes with low dark current and small capacitanceElectronics Letters, 1979
- Conduction Band Minima ofPhysical Review B, 1964