Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence
- 15 July 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (2) , 1343-1345
- https://doi.org/10.1063/1.357800
Abstract
Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit.This publication has 11 references indexed in Scilit:
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