Electron trapping in thin SiO2 films due to avalanche currents
- 1 November 1972
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 13 (1)
- https://doi.org/10.1016/0040-6090(72)90145-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Channel Shortening in MOS Transistors during Junction Walk-OutApplied Physics Letters, 1971
- Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrodeIEEE Transactions on Electron Devices, 1971
- Avalanche Injection of Electrons into Insulating SiO2 Using MOS StructuresJournal of Applied Physics, 1970
- A new MNOS charge storage effectSolid-State Electronics, 1969
- THE INTRODUCTION OF CHARGE IN SiO2 AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORSApplied Physics Letters, 1969
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969