A new MNOS charge storage effect
- 31 December 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (12) , 981-987
- https://doi.org/10.1016/0038-1101(69)90020-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A new insulated gate tetrode with high drain breakdown potential and low miller feedback capacitanceIEEE Transactions on Electron Devices, 1968
- RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURESApplied Physics Letters, 1968
- MEMORY BEHAVIOR OF AN MNS CAPACITORApplied Physics Letters, 1968
- TRANSIENT VOLTAGE BREAKDOWN DUE TO AVALANCHE IN MIS CAPACITORSApplied Physics Letters, 1966
- Photoemission of Electrons from Silicon and Gold into Silicon DioxidePhysical Review B, 1966