Molecular beam epitaxy of semiconductor, dielectric and metal films
- 1 July 1986
- Vol. 36 (7-9) , 419-426
- https://doi.org/10.1016/0042-207x(86)90219-8
Abstract
No abstract availableThis publication has 47 references indexed in Scilit:
- Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAsJournal of Applied Physics, 1983
- Silicon molecular beam epitaxyThin Solid Films, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Growth of III–V semiconductors by molecular beam epitaxy and their propertiesThin Solid Films, 1983
- Silicon MBE apparatus for uniform high-rate deposition on standard format wafersJournal of Vacuum Science and Technology, 1982
- Oscillations in the surface structure of Sn-doped GaAs during growth by MBESurface Science, 1981
- High-purity GaAs and Cr-doped GaAs epitaxial layers by MBEJournal of Applied Physics, 1979
- Present status and future directions for MBESurface Science, 1979
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Computer-Controlled Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1974