Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces
- 1 June 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 130-132, 176-181
- https://doi.org/10.1016/s0169-4332(98)00046-4
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Initial stage of oxidation of hydrogen-terminated silicon surfacesApplied Surface Science, 1996
- Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfacesApplied Surface Science, 1996
- Initial Oxidation Processes of H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss SpectroscopyJapanese Journal of Applied Physics, 1996
- Periodic Changes in SiO2/Si(111) Interface Structures with Progress of Thermal OxidationJapanese Journal of Applied Physics, 1994
- High resolution x-ray photoemission spectroscopy studies of thin SiO2 and Si/SiO2 interfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985
- Retardation of Sb Diffusion in Si during Thermal OxidationJapanese Journal of Applied Physics, 1981
- Anomalous temperature effect of oxidation stacking faults in siliconApplied Physics Letters, 1975
- Oxidation-induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics, 1974
- Surface Damage and Copper Precipitation in SiliconPhysica Status Solidi (b), 1963