Electron Beam Induced Current Versus Temperature Investigations of Localized Dislocations in Heat-Treated Czochralski Silicon

This publication has 8 references indexed in Scilit:

• Classification of macroscopic defects contained in p-type EFG ribbon silicon
  Solid-State Electronics, 1986
• Electron-beam-induced current investigations of oxygen precipitates in silicon
  Journal of Applied Physics, 1985
• Theoretical study of the temperature dependence of EBIC contrast from individual, surface-parallel dislocations in a Schottky diode
  Physica Status Solidi (a), 1984
• Investigation of diffusion length and lifetime in lead chalcogenides by electron-beam-induced-current measurements at low temperatures
  Journal of Applied Physics, 1984
• A theoretical interpretation of the electrical behaviour of individual edge dislocations in Si as determined by combined EBIC/TEM studies
  Crystal Research and Technology, 1981
• The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type silicon
  Physica Status Solidi (a), 1979
• Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductors
  Physica Status Solidi (a), 1979
• The electrical properties of stacking faults and precipitates in heat-treated dislocation-free Czochralski silicon
  Applied Physics Letters, 1977