Heteroepitaxial growth of high mobility InAsP from the vapor phase
- 15 April 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8) , 766-768
- https://doi.org/10.1063/1.94910
Abstract
High quality InAsxP1−x epitaxial layers were heteroepitaxially deposited on InP substrates from the vapor phase using the hydride technique. For phosphorus rich alloys electron mobilities as high as 29 800 cm2/Vs were observed at 77 K. Electrical data indicated that ionized impurity scattering was limiting the mobility at low temperatures since alloys had 77-K mobilities comparable to that of InP grown in this system. Alloys with high electron mobilities could be prepared without deliberate compositional grading.Keywords
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