Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethylvinylsilane
- 1 April 1994
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (4) , 383-390
- https://doi.org/10.1007/bf02671218
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Double-level copper interconnections using selective copper CVDJournal of Electronic Materials, 1992
- Hot-wall chemical vapor deposition of copper from copper(I) compounds. 2. Selective, low-temperature deposition of copper from copper(I) .beta.-diketonate compounds, (.beta.-diketonate)CuLn, via thermally induced disproportionation reactionsChemistry of Materials, 1992
- Selectivity in copper chemical vapor depositionApplied Physics Letters, 1992
- Kinetics of Chemical Vapor Deposition of Copper from (β-diketonate)CuL PrecursorsMRS Proceedings, 1992
- Manufacturing and Technology Requirements for Submicron Multilevel MetalMRS Proceedings, 1992
- Chemical vapor deposition of copper from (hexafluoroacetylacetonato)(alkyne)copper(I) complexes via disproportionationChemistry of Materials, 1991
- Chemical vapor deposition of copper from 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonateApplied Physics Letters, 1991
- A Thermoanalytical Survey of Precursors for Copper Metal‐Organic Chemical Vapor DepositionJournal of the Electrochemical Society, 1991
- Chemical Vapor Deposition of Copper from Copper (II) HexafluoroacetylacetonateJournal of the Electrochemical Society, 1989
- Speed limitations due to interconnect time constants in VLSI integrated circuitsIEEE Electron Device Letters, 1982