Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam
- 18 March 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (12) , 2168-2170
- https://doi.org/10.1063/1.1458685
Abstract
A focused-ion-beam (FIB) technique utilizing both lithographic and nanoparticle formation processes has been introduced to fabricate a single-electron transistor (SET) that can operate at room temperature. The results for the drain current as a function of the gate voltage at different source voltages at room temperature clearly show Coulomb oscillations indicative of Coulomb-blockade effects. These results indicate that SETs operating at room temperature, fabricated utilizing the FIB technique, hold promise for potential applications in ultra-high-density memory devices.Keywords
This publication has 16 references indexed in Scilit:
- Formation of Ordered Nanoscale Semiconductor Dots by Ion SputteringScience, 1999
- Single-electron devices and their applicationsProceedings of the IEEE, 1999
- Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperatureApplied Physics Letters, 1998
- Quantum mechanical effects in the silicon quantum dot in a single-electron transistorApplied Physics Letters, 1997
- Room temperature operation of Si single-electron memory with self-aligned floating dot gateApplied Physics Letters, 1997
- Coulomb Blockade as a Noninvasive Probe of Local Density of StatesPhysical Review Letters, 1996
- Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti systemApplied Physics Letters, 1996
- Single hole quantum dot transistors in siliconApplied Physics Letters, 1995
- Fabrication technique for Si single-electron transistoroperating at room temperatureElectronics Letters, 1995
- Determination of Coulomb-blockade resistances and observation of the tunneling of single electrons in small-tunnel-junction circuitsPhysical Review Letters, 1991