The analysis of dislocations in strained III-V semiconductor crystals using elastobirefringence
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4375-4378
- https://doi.org/10.1063/1.328300
Abstract
If the sign of the strain in a III‐V crystal is known, it is possible to characterize dislocations in that crystal completely as regards their edge components. The technique for doing this is discussed and applied to the particular case of GaAs substrates on which Ga1−xAlxAs epitaxial layers have been grown by LPE.This publication has 5 references indexed in Scilit:
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- Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substratesJournal of Crystal Growth, 1977
- Quantitative piezobirefringence studies of dislocations in transparent crystalsPhilosophical Magazine, 1976
- Thermal Expansion of AlAsJournal of Applied Physics, 1970
- The Kinetics and Mechanism of Formation of Anode Films on Single-Crystal InSbJournal of the Electrochemical Society, 1957