Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation
- 4 September 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (10) , 1496-1498
- https://doi.org/10.1063/1.1308055
Abstract
We demonstrate the effects of NH 3 flow modulation on the lateral growth rate and morphology of GaN stripes employing lateral epitaxial overgrowth (LEO) by metalorganic chemical vapor deposition. The self-limiting growth mechanism, enhanced Ga diffusion on the (0001) plane, and Ga lateral supply are used to explain our observations. A lateral overgrowth rate to a vertical growth rate ratio of 2.1 and fully coalesced LEO GaN stripes after 1 h growth have been achieved.Keywords
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