Conditions for VPE growth of AlxGa1−xAs alloys in inorganic transport systems
- 30 November 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (2) , 330-338
- https://doi.org/10.1016/0022-0248(81)90031-2
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- VPE growth of AlxGa1−xAsJournal of Crystal Growth, 1978
- Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- VPE Growth of n ‐ AlAs on GaAs for Heterojunction DevicesJournal of the Electrochemical Society, 1976
- Kinetic aspects in the vapour phase epitaxy of III–V compoundsJournal of Crystal Growth, 1975
- GaAs growth by vapour phase transport: II. Interpretation of the growth of the {001} faces by the adsorption of gallium monochloride and arsenic moleculesJournal of Crystal Growth, 1975
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Vapor Growth and Properties of AlAsJournal of the Electrochemical Society, 1971
- Reaction Equilibria in the Growth of GaAs and GaP by the Chloride Transport ProcessJournal of the Electrochemical Society, 1970
- Preparation and Properties of AlAs-GaAs Mixed CrystalsJournal of the Electrochemical Society, 1966