On the behaviour of lithium in silicon
- 1 May 1972
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 101 (1) , 1-9
- https://doi.org/10.1016/0029-554x(72)90746-x
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- A New Striation Etch for SiliconJournal of the Electrochemical Society, 1970
- Leakage currents of n+p silicon diodes with different amounts of dislocationsSolid-State Electronics, 1969
- Measurement of Minority Carrier Lifetime in Silicon of Low Dislocation DensityPhysica Status Solidi (b), 1969
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Impurity Distribution in Single CrystalsJournal of the Electrochemical Society, 1968
- Impurity Distribution in Single CrystalsJournal of the Electrochemical Society, 1967
- Study of Impurity Heterogeneities in InSb by Means of a Permanganate EtchantJournal of the Electrochemical Society, 1967
- The Debye‐Waller Factors of Copper and Gold by de Launay's MethodPhysica Status Solidi (b), 1964
- Lifetime in-Type SiliconPhysical Review B, 1958