High supersaturation layer-by-layer growth: Application to Si MBE
- 30 April 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 74 (3) , 597-604
- https://doi.org/10.1016/0022-0248(86)90207-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Growth kinetics of Si-molecular beam epitaxyApplied Physics A, 1982
- The roughness of cleaved semiconductor surfacesSurface Science, 1973
- Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh VacuumJournal of Applied Physics, 1968
- The microscopic kinetics of step motion in growth processesJournal of Physics and Chemistry of Solids, 1963
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951