Three-dimensional scattering-assisted tunneling in resonant-tunneling diodes

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Abstract
A quantum model and simulator for resonant tunneling diodes that includes three-dimensional (3D) scattering-assisted tunneling processes is reported. The 3D phase-breaking or quasi-phase-breaking scattering processes considered are polar scattering by optical phonons, deformation potential scattering by acoustic phonons, interface roughness scattering, and alloy scattering. The simulator solves Schrödinger equation in 3D using an expansion in terms of sequential scattering events. The average transmission and reflected currents are then calculated using an (analytic) ensemble average over the scatterers. We assume that the scattering events are uncorrelated and use a semiclassical phonon field. The relaxation approximation is not used. Back scattering is included so that the current is conserved. An important feature is that the 3D analysis permits one to account for the variation of the perpendicular momentum of the electron in the scattering process. This variation of the perpendicular momentum and the dependence of the scattering process upon the initial perpendicular momentum are the source of the broadening of the transmission coefficient.