Disorder-assisted tunneling through a double-barrier structure
- 19 February 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (8) , 817-820
- https://doi.org/10.1103/physrevlett.64.817
Abstract
We consider the effect of disorder on coherent tunneling of electrons through a double-barrier structure. When the disorder potential is treated in leading order we obtain a result with transparent physical consequences. The effect of interface roughness on resonant tunneling is shown to depend qualitatively on the location of the rough interface. Our results may help to explain the often observed asymmetry in the current-voltage characteristics of double-barrier structures.Keywords
This publication has 13 references indexed in Scilit:
- Model of phonon-associated electron tunneling through a semiconductor double barrierPhysical Review Letters, 1989
- Quantum-mechanical resonant tunneling in the presence of a boson fieldPhysical Review B, 1989
- Coherent versus incoherent resonant tunneling and implications for fast devicesSuperlattices and Microstructures, 1989
- On-Site Coulomb Repulsion and Resonant TunnelingPhysical Review Letters, 1988
- Resonant Tunneling with Electron-Phonon Interaction: An Exactly Solvable ModelPhysical Review Letters, 1988
- Electron transport in multiple-quantum-well structuresSemiconductor Science and Technology, 1988
- Interface roughness scattering in GaAs/AlAs quantum wellsApplied Physics Letters, 1987
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Tunneling in a finite superlatticeApplied Physics Letters, 1973