Infrared Optical Constants and Dielectric Response Functions of Silicon Nitride and Oxynitride Films
- 21 February 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 183 (2) , 439-449
- https://doi.org/10.1002/1521-396x(200102)183:2<439::aid-pssa439>3.0.co;2-b
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Nitrogen influence on dangling-bond configuration in silicon-rich SiOx:N,H thin filmsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Photothermal radiometric and spectroscopic measurements on silicon nitride thin filmsJournal of Applied Physics, 1997
- Hard antireflecting PECVD silicon nitride coatings on polycrystalline germaniumInfrared Physics & Technology, 1997
- Complete Optical Analysis to Obtain the Absorption Coefficient of the Interstitial Oxygen Vibration in SiliconApplied Spectroscopy, 1996
- Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopyJournal of Vacuum Science & Technology A, 1996
- Fourier Transform Infrared Spectroscopic Study of Oxide Films Grown in Pure N2OJapanese Journal of Applied Physics, 1995
- Infrared optical constants and roughness factor functions determination: the HTHRTR methodApplied Optics, 1991
- Radiative cooling to low temperatures: General considerations and application to selectively emitting SiO filmsJournal of Applied Physics, 1981
- The control of errors in i.r. spectrophotometry—IV. Corrections for dispersion distortion and the evaluation of both optical constantsSpectrochimica Acta Part A: Molecular Spectroscopy, 1976
- IntroductionPublished by Springer Nature ,1975