Characteristics of a Semi-Insulating InP:Fe Wafer

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Abstract
A semi-insulating InP:Fe wafer has been investigated by Hall effect measurements. A 2-inch semi-insulating InP:Fe wafer was divided into 63 squares of 5×5 mm2, and 17 samples were selected along the and directions to determine the characteristics of the whole wafer. The resistivity, Hall mobility, Hall coefficient, and carrier concentration at room temperature were in the range of 2.1–4.6×107 ohm·cm, 1700–3000 cm2/V·sec, 5.5–14×1010 cm3/coul, and 4.5–11×107 cm3, respectively. From the measured Hall mobilities the impurity scattering mobilities were calculated and the neutral impurity concentration was estimated as to be 0.85–2.6×1016 cm-3. The resistivity distribution revealed that the 17 samples can be classified into 3 groups.