Precursors for Si atomic layer epitaxy: Real time adsorption studies on Si(100)
- 12 October 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (15) , 1802-1804
- https://doi.org/10.1063/1.108405
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Atomic layer epitaxy of silicon by dichlorosilane studied with core level spectroscopyJournal of Vacuum Science & Technology A, 1992
- Adsorption and desorption kinetics for SiH2Cl2 on Si(111) 7×7Journal of Vacuum Science & Technology A, 1992
- Atomic hydrogen-driven halogen extraction from silicon(100): Eley-Rideal surface kineticsJournal of the American Chemical Society, 1992
- Hydrogen coverage during Si growth from SiH4 and Si2H6Applied Physics Letters, 1992
- Mechanisms and kinetics of Si atomic-layer epitaxy on Si(001)2×1 from Si2H6Journal of Vacuum Science & Technology A, 1991
- Self-Limiting Adsorption of SiCl2H2 and Its Application to the Layer-by-Layer Photochemical ProcessJapanese Journal of Applied Physics, 1991
- The chemisorption of chlorosilanes and chlorine on Si(111)7 × 7Surface Science, 1990
- Molecular layer epitaxy of siliconJournal of Crystal Growth, 1990
- Direct recoil spectrometryCritical Reviews in Solid State and Materials Sciences, 1988