Silicon epitaxy on hydrogen-terminated Si(001) surfaces using thermal and energetic beams
- 1 March 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 374 (1-3) , 283-290
- https://doi.org/10.1016/s0039-6028(96)01198-3
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Crystal-state–amorphous-state transition in low-temperature silicon homoepitaxyPhysical Review B, 1994
- Effect of H on Si molecular-beam epitaxyJournal of Applied Physics, 1993
- Critical epitaxial thicknesses for low-temperature (20–100 °C) Ge(001)2×1 growth by molecular-beam epitaxyJournal of Applied Physics, 1993
- Very low temperature (<400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiationApplied Physics Letters, 1993
- 370 °C clean for Si molecular beam epitaxy using a HF dipApplied Physics Letters, 1991
- Low-temperature homoepitaxy on Si(111)Applied Physics Letters, 1991
- Microvoid formation in low-temperature molecular-beam-epitaxy-grown siliconPhysical Review B, 1991
- Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)Physical Review Letters, 1990
- Hydrogen adsorption on Si(100)-2×1 surfaces studied by elastic recoil detection analysisPhysical Review B, 1990
- Kinetics of ordered growth of Si on Si(100) at low temperaturesPhysical Review B, 1989