Thermal stability of ZnSe epilayer grown by MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 656-661
- https://doi.org/10.1016/0022-0248(88)90599-4
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Lattice-Mismatch Enhanced Diffusion at a ZnSe/GaAs Interface - Increase of Thermal Stability in a Lattice-Matching SystemJapanese Journal of Applied Physics, 1987
- Epitaxial Growth of High Quality ZnSe on GaAs Substrate by Atmospheric Pressure MOVPE Using Dimethylzinc and Hydrogen SelenideJapanese Journal of Applied Physics, 1987
- Characterization of ZnSe grown by molecular-beam epitaxyJournal of Crystal Growth, 1985
- Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpeJournal of Crystal Growth, 1985
- Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1984
- Photoluminescence and Electrical Properties of Undoped and Cl-Doped ZnSeJapanese Journal of Applied Physics, 1983
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982