Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 34 (7) , 1022-1025
- https://doi.org/10.1109/4.772418
Abstract
This paper gives experimental proof of an intriguing physical effect: periodic on-off switching of MOS transistors in a CMOS ring oscillator reduces their intrinsic 1/f noise and hence the oscillator's close-in phase noise. More specifically, it is shown that the 1/f3 phase noise is dependent on the gate-source voltage of the MOS transistors in the off state. Measurement results, corrected for waveform-dependent upconversion and effective bias, show an 8-dB-lower 1/f3 phase noise than expected. It will be shown that this can be attributed to the intrinsic 1/f noise reduction effect due to periodic on-off switchinKeywords
This publication has 8 references indexed in Scilit:
- Reduction of the 1/f noise induced phase noise in a CMOS ring oscillator by increasing the amplitude of oscillationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1998
- A general theory of phase noise in electrical oscillatorsIEEE Journal of Solid-State Circuits, 1998
- A study of phase noise in CMOS oscillatorsIEEE Journal of Solid-State Circuits, 1996
- Individual Interface Traps and Telegraph NoisePublished by Springer Nature ,1995
- The decrease of ‘‘random telegraph signal’’ noise in metal-oxide-semiconductor field-effect transistors when cycled from inversion to accumulationJournal of Applied Physics, 1992
- 1/ f noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulationApplied Physics Letters, 1991
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- 1/f noiseProceedings of the IEEE, 1982