Fabrication of high aspect ratio silicon pillars of <10 nm diameter
- 23 August 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (8) , 1116-1118
- https://doi.org/10.1063/1.109798
Abstract
We report the fabrication of high aspect ratio, sub-10 nm size, structures in silicon without involving any wet chemical etching. A 50 nm thick double layer of low and high molecular weight polymethylmethacrylate resist was exposed with an 80 kV electron beam of diameter smaller than 5 nm. After exposure the resist was developed in 3:7 cellusolve: methanol with ultrasonic agitation during development. A 5 nm thick AuPd film was deposited by ionized beam evaporation and a metal pattern was obtained by liftoff. Sub-10 nm AuPd dots were recorded with a scanning electron microscope. The AuPd pattern was then used as a mask on the Si substrate which was etched with reactive ion etching. Silicon nanocolumns with diameters ranging from 5 to 7 nm and an aspect ratio of height to diameter of about 7:1 were obtained.Keywords
This publication has 8 references indexed in Scilit:
- Fabrication of wires in silicon germanium materialMicroelectronic Engineering, 1993
- Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resistApplied Physics Letters, 1993
- Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etchingApplied Physics Letters, 1993
- Oxidation of sub-50 nm Si columns for light emission studyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Nanowriter: A new high-voltage electron beam lithography system for nanometer-scale fabricationJournal of Vacuum Science & Technology B, 1988