Extended Defects from Ion Implantation and Annealing
- 1 January 1993
- book chapter
- Published by Elsevier
Abstract
No abstract availableKeywords
This publication has 127 references indexed in Scilit:
- Results of In-Situ Annealing of Ion-Implanted Silicon in a High Voltage Electron MicroscopePhysica Status Solidi (a), 1989
- Residual defects in implanted silicon after annealing with incoherent lightPhysica Status Solidi (a), 1986
- On the effect of doping impurities on the formation of rod-like defects in siliconPhysica Status Solidi (a), 1984
- High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductorsMaterials Letters, 1984
- The interaction between point defects introduced by implantation and dislocations in siliconPhysica Status Solidi (a), 1983
- Transmission electron microscopy observations of low-temperature ion implanted (100) siliconSolid-State Electronics, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Effects of dislocations in silicon transistors with implanted emittersSolid-State Electronics, 1979
- Effects of dislocations in silicon transistors with implanted basesSolid-State Electronics, 1977
- THE ATOMIC ARRANGEMENT IN GLASSJournal of the American Chemical Society, 1932