Bandgap Narrowing and Its Effects on the Properties of Moderately and Heavily Doped Germanium and Silicon
- 1 January 1991
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 138 references indexed in Scilit:
- Application of open circuit voltage decay to the characterisation of heavy doping parameters in a p+ emitter of a junction diodeSolid-State Electronics, 1990
- Optical characterization of heavily doped siliconSolid-State Electronics, 1987
- Modeling silicon emitters for VLSI transistorsSolid-State Electronics, 1987
- Effect of emitter recombinations on the open circuit voltage decay of a junction diodeSolid-State Electronics, 1981
- On the separation of quasi-Fermi levels and the boundary conditions for junction devicesSolid-State Electronics, 1980
- The emitter efficiency of bipolar transistors: Theory and experimentsSolid-State Electronics, 1977
- Variation of impurity−to−band activation energies with impurity densityJournal of Applied Physics, 1975
- Density of states and interband absorption of light in strongly doped semiconductorsSoviet Physics Uspekhi, 1974
- Transport equations in heavily doped silicon, and the current gain of a bipolar transistorSolid-State Electronics, 1973
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967