Oxidation through the zirconia substrates of heteroepitaxial silicon films Grown on yttria-stabilized cubic zirconia
- 1 September 1985
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 14 (5) , 531-550
- https://doi.org/10.1007/bf02654023
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Clarification of some concepts in chemical diffusion, or Darken, Kirkendall, and other sources of difficulties and confusion in diffusionJournal of Solid State Chemistry, 1984
- Rutherford backscattering and channeling analysis of epitaxial, low-mass films on high-mass substratesNuclear Instruments and Methods in Physics Research, 1983
- Si on Cubic ZirconiaJournal of the Electrochemical Society, 1983
- Heteroepitaxial Si films on yttria-stabilized, cubic zirconia substratesApplied Physics Letters, 1983
- Influence of sapphire substrate orientation on SOS crystalline quality and SOS/MOS transistor mobilityJournal of Crystal Growth, 1982
- Measurements of defects and strain in SOS films after cw Ar laser annealing in the liquid phase regimeApplications of Surface Science, 1981
- Electrochemistry of mixed ionic-electronic conductorsPublished by Springer Nature ,1977
- Conduction mechanism in yttria stabilized zirconiaPhysics Letters A, 1967
- Thermal Expansion of Yttria‐Stabilized ZirconiaJournal of the American Ceramic Society, 1964
- Effect of an Electric Field on Silicon OxidationThe Journal of Chemical Physics, 1962