Single-word multiple-bit upsets in static random access devices
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1941-1946
- https://doi.org/10.1109/23.273460
Abstract
Space-borne electronics systems incorporating high-density static random access memory (SRAM) are vulnerable to single-word multiple-bit upsets (SMUs). We review here recent observations of SMU, present the results of a systematic investigation of the physical cell arrangements employed in several currently available SRAM device types, and discuss implications for the occurrence and mitigation of SMU.This publication has 9 references indexed in Scilit:
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