In Situ IR Spectroscopic Observation of a-Si:H(F) Films Growing under Spontaneous Chemical Deposition Method

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Abstract
Polarization modulation infrared spectroscopy has been applied to in situ observation of a-Si:H(F) films deposited by the spontaneous chemical deposition (SCD) method. The film showed multiple IR absorption bands due to the formation of various hydrogenated and fluorinated silicon species. These bands increased in intensity with deposition time, although the rates of intensity increase of the bands were different from each other. The absorption intensity change of these bands with the deposition time suggests that the predominant species in the initial stage of the deposition is fluorinated silicon. The exposure to air of the film deposited at a low substrate temperature resulted in the remarkable intensity decrease of the bands due to fluorinated silicon, accompanying the appearance of the Si–O stretching band.